Elpida Begins Mass Production of 40nm 2Gbit DDR3 SDRAM

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Elpida Memory has started volume production of 40nm process 2GBIT DDR3 SDRAMs that will bring the price of DDR3 chips down and drive further adoption. Since completing development of the DDR3 SDRAM last October it has taken Elpida only two months to ramp up mass production at its Hiroshima plant.
The new 2Gbit device fits 44% more chips per wafer compared with Elpida's 50nm DDR3 SDRAM and a 100% yield for DDR3 products that operate at 1.6Gbps, the fastest speed standard for current DDR3. It also supports high-speed products. Compared with 50nm products, it uses about two-thirds less current and supports 1.2V/1.35V operation as well as DDR3 standard 1.5V, resulting in reduced power consumption of around 50%.
In the second quarter of 2010, 40nm process production will also begin at Rexchip, a subsidiary in Taiwan, to increase the manufacture of 40nm process products in order to lower products costs. Depending on conditions in the DRAM market, Elpida may transfer 40nm process technology to foundry partners ProMOS and Winbond to expand production based on this technology to an even higher level.

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