Access the latest quantum technology

Quantum technology in Bristol and bath - find out more about how you can access the commercialisation of quantum technology for sensing and security

Thursday, January 31, 2019

Samsung ships industry's first 1Tbyte embedded memory

By Nick Flaherty www.flaherty.co.uk

Samsung Electronics has started mass production of the industry’s first one terabyte embedded , created with 16 stacked layers of NAND flash.

This comes just four years after the 128Gbyte Universal Flash Storage (eUFS) chip.

“The 1TB eUFS is expected to play a critical role in bringing a more notebook-like user experience to the next generation of mobile devices,” said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics. “What’s more, Samsung is committed to assuring the most reliable supply chain and adequate production quantities to support the timely launches of upcoming flagship smartphones in accelerating growth of the global mobile market.”

Within the same 11.5mm x 13.0mm package,  the 1TB eUFS doubles the capacity of the previous 512GB version by combining 16 stacked layers of Samsung’s most advanced 512Gbit V-NAND flash memory and a newly developed proprietary controller. Smartphone users will now be able to store 260 10-minute videos in 4K UHD (3840×2160) format, whereas the 64GB eUFS widely used in many current high-end smartphones is capable of storing 13 videos of the same size.

The 1TB eUFS supports a transfer speed of 1Gbit/s, approximately twice the sequential read speed of a typical 2.5-inch SATA solid state drive (SSD). This means that 5GB-sized full HD videos can be offloaded to an NVMe SSD in five seconds, 10 times the speed of a typical microSD card. 

The random read speed has also increased by up to 38 percent over the 512GB version, clocking in at up to 58,000 IOPS. Random writes are 500 times faster than a high-performance microSD card (100 IOPS), coming in at up to 50,000 IOPS. The random speeds allow for high-speed continuous shooting at 960 frames per second.

Samsung plans to expand the production of its fifth-generation 512Gb V-NAND at its Pyeongtaek plant in Korea throughout the first half of 2019.

Comparison of Internal Memory Performance
MemorySequential
Read Speed
Sequential
Write Speed
Random
Read Speed
Random
Write Speed
Samsung1TB eUFS 2.1(Jan. 2019)1000 MB/s260 MB/s58,000 IOPS50,000 IOPS
Samsung
512GB eUFS 2.1
(Nov. 2017)
860 MB/s255 MB/s42,000 IOPS40,000 IOPS
Samsung
eUFS 2.1 for automotive
(Sept. 2017)
850 MB/s150 MB/s45,000 IOPS32,000 IOPS
Samsung
256GB UFS Card
(July 2016)
530 MB/s170 MB/s40,000 IOPS35,000 IOPS
Samsung
256GB eUFS 2.0
(Feb. 2016)
850 MB/s260 MB/s45,000 IOPS40,000 IOPS
Samsung
128GB eUFS 2.0
(Jan. 2015)
350 MB/s150 MB/s19,000 IOPS14,000 IOPS
eMMC 5.1250 MB/s125 MB/s11,000 IOPS13,000 IOPS
eMMC 5.0250 MB/s90 MB/s7,000 IOPS13,000 IOPS
eMMC 4.5140 MB/s50 MB/s7,000 IOPS2,000 IOPS

No comments: