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from eeNews Europe
Monday, May 13, 2019
Siemens $30bn power spinout ... $1bn SiC boost at Cree ... Integrating sensors onto a GaN power chip ... first defect free 2in AlN wafer
Power news this week by Nick Flaherty at eeNews Europe Power
www.flaherty.co.uk
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Siemens spinout to create $30bn power giant
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Romeo teams with BorgWarner for battery cell and pack production
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$1bn silicon carbide boost at Cree
POWER TECH TO WATCH
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X-Fab teams for first substrate analysis tool for high voltage designs
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GaN single chip integrates sensors for the first time
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First defect-free AlN power wafer
NEW POWER PRODUCTS
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1200V IGBT family reduces automotive inverter size
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Three pin packages boost 650V silicon carbide FETS
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Power density boost of 48x from new 8x8mm package
TECHNICAL PAPERS
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Using precision current sensing to optimize system performance
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Infineon: Semiconductor solutions for robotics
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