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Monday, August 07, 2017

Everspin samples first 1Gbit MRAM

By Nick Flaherty

Everspin Technologies has begun sampling its 1Gbit  Spin Torque Magnetoresistive Random Access Memory (ST-MRAM) with lead customers.

This provides a high-endurance, persistent memory with a DDR4 interface for storage system developers. This allows SSD designers to use the persistent persistent memory that is inherently power fail-safe while also reducing write amplification and overprovisioning, common limitations for NAND Flash based SSDs.

The 1Gbit devices are built on 28nm CMOS on 300mm wafers at GLOBALFOUNDRIES, using Everspin’s patented perpendicular magnetic tunnel junction (pMTJ) technology. They are being used in Everspin’s nvNITROTMstorage accelerator sub-systems.

“We are very excited to begin sampling our 1 Gbit product,” said Phill LoPresti, Everspin’s President and CEO. “Getting our latest technology into customers’ hands so they can develop their products to take advantage of the unique capabilities of high-endurance, fast, persistent memory is a significant milestone for Everspin.”

Everspin is the only provider of commercially available MRAM solutions and has shipped over 70 million MRAM units, the largest density so far being 256Mbit on 40nm.

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